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General Introduction

  • Takahiro NagataEmail author
Chapter
  • 25 Downloads
Part of the NIMS Monographs book series (NIMSM)

Abstract

The integrated circuit technologies stand at a crucial turning point in establishing the fundamentals for further advancement. To overcome the performance limits of conventional materials such as SiO2 gate, polycrystalline Si gate, and Al wiring, it is necessary to develop a new material with a new functionality that is not found in Si devices up to now, such as nonvolatile memory function.

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Copyright information

© National Institute for Materials Science, Japan 2020

Authors and Affiliations

  1. 1.Research Center for Functional MaterialsNational Institute for Materials ScienceTsukubaJapan

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