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Decoration of domain boundaries: group III–V compounds: InSb

  • J. WollschlägerEmail author
Part of the Condensed Matter book series (volume 45B)

Abstract

In this chapter the decoration of domain boundaries in group III-IV compounds InSb (001) surface using various methods are discussed in detail.

See Table 61.1.
Table 61.1

InSb

Miller index

Superstructure

Deposit

Sample preparation

Deposition technique

Major experimental techniques

Supporting experimental techniques

Results

Ref.

Fig.

Remarks

InSb (001)

(8 × 4)

FePc

Ar+-ISA (700 eV/670 K)

PVD of FePc at RT

LT-STM

LEED

AES

Decoration of DBs aligned parallel to [-110] by FePc at 70 K

[08Ahl]

 
Symbols and abbreviations

Short form

Full form

ISA

ion sputtering and annealing

PVD

physical vapor deposition

RT

room temperature

LT-STM

low-temperature scanning tunneling microscopy

AES

Auger electron spectroscopy

LEED

low-energy electron diffraction

DB

domain boundary

References

  1. [08Ahl]
    Ahlund, J., Nilson, K., Palmgren, P., Göthelid, E., Schiessling, J., Göthelid, M., Martensson, N., Puglia, C.: J. Phys. Chem. C112, 6887 (2008)Google Scholar

Copyright information

© Springer-Verlag GmbH Germany 2018

Authors and Affiliations

  1. 1.Fachbereich PhysikUniversität OsnabrückOsnabrückGermany

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