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Decoration of domain boundaries: group IV elements and IV–IV compounds: SiC

  • J. WollschlägerEmail author
Chapter
Part of the Condensed Matter book series (volume 45B)

Abstract

In this chapter the decoration of domain boundaries in group IV elements and IV–IV compounds SiC surface using various methods are discussed in detail.

See Table 60.1.
Table 60.1

SiC

Miller index

Superstructure

Deposit

Sample preparation

Deposition technique

Major experimental techniques

Supporting experimental techniques

Results

Ref.

Fig.

Remarks

β-(001)

(2 × 1)

SiH4, Si3H8

SiCMBE on 4° vicinal Si(001)

CVD of SiH4 or Si3H8

STM

Si decoration of DBs between (3 × 2) and c(4 × 2) domains

[97Sou1]

[97Sou2]

 
Symbols and abbreviations

Short form

Full form

CVD

chemical vapor deposition

DB

domain boundary

MBE

molecular beam epitaxy

STM

scanning tunneling microscopy

References

  1. [97Sou1]
    Soukiassian, P., Semond, F., Douillard, L., Mayne, A., Dujardin, G., Pizzagalli, L., Joachim, C.: Phys. Rev. Lett. 78, 907 (1997)ADSCrossRefGoogle Scholar
  2. [97Sou2]
    Soukiassian, P., Semond, F., Mayne, A., Dujardin, G.: Phys. Rev. Lett. 79, 2498 (1997)ADSCrossRefGoogle Scholar

Copyright information

© Springer-Verlag GmbH Germany 2018

Authors and Affiliations

  1. 1.Fachbereich PhysikUniversität OsnabrückOsnabrückGermany

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