Advertisement

Decoration of domain boundaries: group IV elements and IV–IV compounds: other Si surfaces

  • J. WollschlägerEmail author
Part of the Condensed Matter book series (volume 45B)

Abstract

In this chapter the decoration of domain boundaries in group IV elements and IV–IV compounds Si (110) and Si (113) surfaces are discussed in detail.

See Table 58.1.
Table 58.1

Other Si surfaces

Miller index

Superstructure

Deposit

Sample preparation

Deposition technique

Major experimental techniques

Supporting experimental techniques

Results

Ref.

Fig.

Remarks

(110)

(16 × 2)

Ge

Flash annealing at 1500 K

Ge MBE

STM

LEED

Decoration of RDBs by Ge after annealing at 700 °C

[13Yok]

 

(113)

(3 × 2)

Sb4

Flash annealing at 1250 °C

Sb4PVD at RT

STM

LEED

AES

Preferential Sb4 nucleation at APDBs

[96Müs]

 
Symbols and abbreviations

Short form

Full form

STM

scanning tunneling microscopy

LEED

low-energy electron diffraction

RDB

rotated domain boundary

APDB

antiphase domain boundary

MBE

molecular beam epitaxy

PVD

physical vapor deposition

RT

room temperature

References

  1. [96Müs]
    Müssig, H.-J., Dabrowski, J., Arabczyk, W., Hinrich, S., Wolff, G.: J. Vac. Sci. Technol. B14, 982 (1996)CrossRefGoogle Scholar
  2. [13Yok]
    Yokoyama, Y., Yamazaki, T., Asaoka, H.: J. Cryst. Growth.378, 230 (2013)ADSCrossRefGoogle Scholar

Copyright information

© Springer-Verlag GmbH Germany 2018

Authors and Affiliations

  1. 1.Fachbereich PhysikUniversität OsnabrückOsnabrückGermany

Personalised recommendations