Physics of Solid Surfaces pp 284-284 | Cite as
Decoration of domain boundaries: group IV elements and IV–IV compounds: other Si surfaces
Abstract
In this chapter the decoration of domain boundaries in group IV elements and IV–IV compounds Si (110) and Si (113) surfaces are discussed in detail.
Other Si surfaces
| Miller index | Superstructure | Deposit | Sample preparation | Deposition technique | Major experimental techniques | Supporting experimental techniques | Results | Ref. | Fig. |
|---|---|---|---|---|---|---|---|---|---|
| Remarks | |||||||||
| (110) | (16 × 2) | Ge | Flash annealing at 1500 K | Ge MBE | STM | LEED | Decoration of RDBs by Ge after annealing at 700 °C | [13Yok] | |
| (113) | (3 × 2) | Sb4 | Flash annealing at 1250 °C | Sb4PVD at RT | STM | LEED AES | Preferential Sb4 nucleation at APDBs | [96Müs] |
| Short form | Full form |
|---|---|
| STM | scanning tunneling microscopy |
| LEED | low-energy electron diffraction |
| RDB | rotated domain boundary |
| APDB | antiphase domain boundary |
| MBE | molecular beam epitaxy |
| PVD | physical vapor deposition |
| RT | room temperature |
References
- [96Müs]Müssig, H.-J., Dabrowski, J., Arabczyk, W., Hinrich, S., Wolff, G.: J. Vac. Sci. Technol. B14, 982 (1996)CrossRefGoogle Scholar
- [13Yok]Yokoyama, Y., Yamazaki, T., Asaoka, H.: J. Cryst. Growth.378, 230 (2013)ADSCrossRefGoogle Scholar