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Structure of domain boundaries: group IV elements and IV–IV compounds: SiC

  • J. WollschlägerEmail author
Chapter
Part of the Condensed Matter book series (volume 45B)

Abstract

This chapter discusses the structure of domain boundary in silicon carbide measured using various experimental techniques.

References

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Copyright information

© Springer-Verlag GmbH Germany 2018

Authors and Affiliations

  1. 1.Fachbereich PhysikUniversität OsnabrückOsnabrückGermany

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