Carrier Transport in the Warped-Sphere Model
The valence bands of germanium, silicon and the III–V compounds have an extremum at k = 0 and are degenerate there. The constant-energy surfaces for this case are warped spheres which have already been discussed in Sect. 2.4 (Figs. 2.28a–2.28c). In the zincblende lattice typical for III–V compounds, there is no center of inversion, in contrast to the diamond lattice.
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- 8.1L. Pincherle: In Proc. Intl School of Physics XXII, ed. by R.A. Smith ( Academic, New York 1963 ) p. 43Google Scholar
- 8.2J.G. Mavroides: In Optical Properties of Solids, ed. by F. Abeles ( North-Holland, Amsterdam 1972 ) p. 394Google Scholar
- 8.5G.E. Pikus, G.L. Bir: Fiz. Tverd. Tela 1, 1642 (1959)Google Scholar
- G.E. Pikus, G.L. Bir: Engl. trans!.: Sov. Phys. -Solid State 1, 1502 (1959)Google Scholar
- 8.6K. Bulthuis: Philips Res. Rep. 23, 25 (1968)Google Scholar
- 8.7S.H. Koenig: In Proc. Int’l School of Physics XXII, ed. by R.A. Smith ( Academic, New York 1963 ) p. 515Google Scholar
- 8.12P. Lawaetz: Some Transport Properties of Holes in Germanium, Dissertation, Tech. Univ. Copenhagen (1967) p. 138Google Scholar
- 8.13A.C. Beer: Solid State Physics 4, Chap.20b (Academic, New York 1963) ed. by F. Seitz, D. TurnbullGoogle Scholar
- 8.22P. Hauge: The Microwave Magneto-Kerr Effect in Germanium and Silicon and its Applications to Studies of Carrier Relaxation Time and Effective Mass. Ph.D. Thesis, Univ. of Minnesota, USA (1967)Google Scholar
- 8.28R. Bray, D.M. Brown: Proc. Int’l Conf. Phys. Semicond, Prague 1960 (Czech. Acad. Sciences, Prague 1960 ) p. 82Google Scholar