Advertisement

Charge Transport and Scattering Processes in the Many-Valley Model

  • Karlheinz Seeger
Chapter
Part of the Springer Series in Solid-State Sciences book series (SSSOL, volume 40)

Abstract

In Sect. 2.4, Figs. 2.26, 27, we saw that the conduction bands of silicon and germanium have constant energy surfaces near the band edge which are either 8 half-ellipsoids or 6 ellipsoids of revolution; these correspond to 4 and 6 energy valleys, respectively. In these and many other semiconductors the many-valley model of the energy bands has proved to be a fruitful concept for a description of the observed anisotropy of electrical and optical phenomena. Cyclotron resonance (Sect. 11.11) provides a direct experimental determination of the effective masses in each valley for any crystallographic direction.

Preview

Unable to display preview. Download preview PDF.

Unable to display preview. Download preview PDF.

References

  1. 7.
    O. Madelung: Introduction to Solid-State Theory,Springer Ser. Solid-State Sci., Vol.2 (Springer, Berlin, Heidelberg 1978) Chap.4Google Scholar
  2. 7.2
    C. Herring: Bell. Syst. Tech. J. 34, 237 (1955)CrossRefGoogle Scholar
  3. 7.3
    C. Herring, E. Vogt: Phys. Rev. 101, 944 (1956)CrossRefGoogle Scholar
  4. C. Herring, E. Vogt: Erratum Phys. Rev. 105, 1933 (1957)CrossRefGoogle Scholar
  5. 7.4
    S.H. Koenig: Proc. Int’l School Phys. Enrico Fermi XXII, 515 (1961)Google Scholar
  6. 7.5
    J.E. Smith, Jr.: Appl. Phys. Lett. 12, 233 (1968)Google Scholar
  7. 7.6
    E.G.S. Paige: In Progress in Semiconductors,Vol.8, ed. by A.F. Gibson, R.E. Burgess (Temple, London 1960) p.158, Fig. 36Google Scholar
  8. 7.7
    H. Heinrich, M. Kriechbaum: J. Phys. Chem. Solids 31, 927 (1970)CrossRefGoogle Scholar
  9. 7.8
    K. Bulthuis: Philips Res. Rep. 23, 25 (1968)Google Scholar
  10. 7.9
    M. Shibuya: Phys. Rev. 95, 1385 (1954)CrossRefGoogle Scholar
  11. M. Shibuya: Physica 20, 971 (1954)CrossRefGoogle Scholar
  12. 7.10
    A.C. Beer: Solid State Physics 4, 228 (Academic, New York 1963) ed. by F. Seitz, D. TurnbullGoogle Scholar
  13. 7.11
    G.L. Pearson, H. Suhl: Phys. Rev. 83, 768 (1951)CrossRefGoogle Scholar
  14. 7.12
    G.L. Pearson, C. Herring: Physica 20, 975 (1954)CrossRefGoogle Scholar
  15. 7.13
    F. Seitz: Phys. Rev. 79, 372 (1950)CrossRefGoogle Scholar
  16. 7.14
    H. Miyazawa: Proc. Int’l Conf. Phys. Semicond. Exeter, 1962 ( Institute of Physics, London 1962 ) p. 636Google Scholar
  17. 7.15
    R.J. Stirn, W.M. Becker: Phys. Rev. 141, 621 (1966)CrossRefGoogle Scholar
  18. 7.16
    C. Herring, T.H. Geballe, J.E. Kunzler: Bell Syst. Tech. J. 38, 657 (1959)Google Scholar
  19. 7.17
    P.M. Eagles, D.M. Edward: Phys. Rev. 138, A1706 (1965)CrossRefGoogle Scholar
  20. 7.18
    D. Long: Phys. Rev. 120, 2024 (1960)CrossRefGoogle Scholar
  21. 7.19
    R.A. Laff, H.Y. Fan: Phys. Rev. 112, 317 (1958)CrossRefGoogle Scholar
  22. 7.20
    H.O. Haller: 33-GHz-Mikrowellen-Faraday-Effekt in isotropen and anisotropen Halbleitern, Dissertation, Univ. Vienna, Austria (1972)Google Scholar
  23. L.J. Neuringer: Proc. Intl Conf: Phys. Semicond., Paris 1964 ( Dunod, Paris 1964 ) p. 379Google Scholar
  24. 7.21
    H. Bruns: Z. Naturforsch. 19a, 533 (1964)Google Scholar
  25. 7.22
    R.A. Laff, H.Y. Fan: Phys. Rev. 112, 317 (1958)CrossRefGoogle Scholar
  26. 7.23
    C. Goldberg, W.E. Howard: Phys. Rev. 110, 1035 (1953)CrossRefGoogle Scholar
  27. 7.24
    H.W. Streitwolf: Phys. Status Solidi 37, K47 (1970)CrossRefGoogle Scholar
  28. 7.25
    D. Long: Phys. Rev. 120, 2024 (1960)CrossRefGoogle Scholar
  29. 7.26
    M. Asche, B.L. Boichenko, V.M. Bondar, O.G. Sarbej: Proc. Int’l Conf. Phys. Semicond., Moscow 1968 (Nauka, Leningrad 1968 ) p. 793Google Scholar
  30. 7.27
    W.A. Harrison: Phys. Rev. 104, 1281 (1956).CrossRefGoogle Scholar
  31. 7.28
    E.M. Conwell: In Solid State Physics Supp1.9, ed. by F. Seitz, D. Turnbull, H. Ehrenreich ( Academic, New York 1967 )Google Scholar
  32. 7.29
    W. Sasaki, M. Shibuya, K. Mizuguchi: J. Phys. Soc. Jpn. 13, 456 (1958)CrossRefGoogle Scholar
  33. W. Sasaki, M. Shibuya, K. Mizuguchi, G. Hatoyama: J. Phys. Chem. Solids 8, 250 (1959)CrossRefGoogle Scholar
  34. 7.30
    M. Shibuya: Phys. Rev. 99, 1189 (1955)CrossRefGoogle Scholar
  35. 7.31
    H. Heinrich, K. Lischka, M. Kriechbaum: Phys. Rev. B. 2, 2009 (1970)Google Scholar
  36. 7.32
    D.E. Aspnes: Phys. Rev. B. 14, 5331 (1976)CrossRefGoogle Scholar
  37. 7.33
    J.E. Smith, M. 1. Nathan, J.C. M.Groddy, S.A. Porowski, W. Paul: Appl. Phys. Lett. 15, 242 (1969)Google Scholar
  38. 7.34
    B.K. Ridley, T.B. Watkins: Proc. Phys. Soc. London 78, 293 (1961)CrossRefGoogle Scholar
  39. B.K. Ridley: Proc. Phys. Soc. London 82, 954 (1963)CrossRefGoogle Scholar
  40. 7.35
    C. Hilsum: Proc. IRE 50, 185 (1962)CrossRefGoogle Scholar
  41. 7.36
    J.B. Gunn: Solid State Commun. 1, 88 (1963)CrossRefGoogle Scholar
  42. J.B. Gunn: in Plasma Effects in Solids ed. by J. Bok ( Dunod, Paris 1964 ) p. 199Google Scholar
  43. 7.37
    J.B. Gunn: Int’l J. Sci. Technol. 46, 43 (1965)Google Scholar
  44. 7.38
    J.E. Carroll: Hot Electron Microwave Generators (Arnold, London 1970) p.105ffGoogle Scholar
  45. 7.39
    D.E. McCumber, A.G. Chynoweth: IEEE Trans. ED 13, 4 (1966)CrossRefGoogle Scholar
  46. 7.40
    P.N. Butcher, W. Fawcett, C. Hilsum: Brit. J. Appl. Phys. 17, 841 (1966)CrossRefGoogle Scholar
  47. 7.41
    P.N. Butcher, W. Fawcett: Brit. J. Appl. Phys. 17, 1425 (1966)CrossRefGoogle Scholar
  48. 7.42
    J.B. Gunn: J. Phys. Soc. J.n. Suppl. 21, 505 (1966)Google Scholar
  49. 7.43
    B.K. Ridley: Phys. Lett. 16, 105 (1965)CrossRefGoogle Scholar
  50. 7.44
    A.R. Hutson, A. Jayaraman, A.G. Chynoweth, A.S. Corriel, A.L. Feldman: Phys. Rev. Lett. 14, 639 (1965)CrossRefGoogle Scholar
  51. 7.45
    J.W. Allen, M. Shyam, Y.S. Chen, G.L. Pearson: Appl. Phys. Lett. 7, 78 (1965)CrossRefGoogle Scholar
  52. 7.46
    P.J. Vinson, C. Pickering, A.R. Adams, W. Fawcett, G.D. Pitt: Proc. 13th Intl Conf. Phys. Semicond, Rome 1976, ed. by F.G. Fumi ( North-Holland, Amsterdam 1976 ) p. 1243Google Scholar
  53. 7.47
    R.W. Keyes: Solid State Physics 11, 149 ( Academic, New York 1960 )Google Scholar
  54. 7.48
    H.W. Thim, M.R. Barber, B.W. Hakki, S. Knight, M. Uenohara: Appl. Phys. Lett. 7, 167 (1965)CrossRefGoogle Scholar
  55. 7.49
    J.A. Copeland: J. Appl. Phys. 38, 3096 (1967)CrossRefGoogle Scholar
  56. 7.50
    G.A. Acket: Festkörper-Probleme IX, 282 ( Vieweg, Braunschweig 1969 )Google Scholar
  57. 7.51
    I.B. Bott, C. Hilsum:IEEE Trans. ED 14, 492 (1967)Google Scholar
  58. 7.52
    S. Kataoka, H. Tateno, M. Kawashima, Y. Komamiya: 7th Intl Conf. Microwave Optical Generation and Amplification, Hamburg 1968 (VDE Berlin 1968 )Google Scholar
  59. 7.53
    G.W. Ludwig: IEEE Trans. ED 14, 547 (1967)CrossRefGoogle Scholar
  60. 7.54
    J.C. McGroddy, M.R. Lorenz, T.S. Plaskett: Solid State Commun. 7, 901 (1969)CrossRefGoogle Scholar
  61. 7.55
    J.W. Allen, M. Shyam, G.L. Pearson: Appl. Phys. Lett. 11, 253 (1967)CrossRefGoogle Scholar
  62. 7.56
    J.C. McGroddy, M.I. Nathan, J.E. Smith, Jr.: IBM J. Res. Dev. 13, 543 (1969)Google Scholar
  63. 7.57
    E.G.S. Paige: IBM J. Res. Dev. 13, 562 (1969)CrossRefGoogle Scholar
  64. 7.58
    J.E. Smith, Jr.: Appl. Phys. Lett. 12, 233 (1968)Google Scholar
  65. 7.59
    J.E. Smith, Jr., J.C. McGroddy, M.I. Nathan: Proc. Intl Conf. Phys. Semicond. Moscow 1968 ( Nauka, Leningrad 1968 ) p. 950Google Scholar
  66. 7.60
    T.K. Gaylord, P.L. Shah, T.A. Rabson: IEEE Trans. ED 15, 777 (1968)CrossRefGoogle Scholar
  67. T.K. Gaylord, P.L. Shah, T.A. Rabson: IEEE Trans. 16, 490 (1969)CrossRefGoogle Scholar
  68. 7.61
    A.M. Barnett: IBM J. Res. Dev. 13, 522 (1969)CrossRefGoogle Scholar
  69. 7.62
    J.D. Maines, E.G.S. Paige: J. Physique C 2, 175 (1969)CrossRefGoogle Scholar
  70. 7.63
    G. Weinreich, T.M. Sanders, Jr., H.G. White: Phys. Rev. 114, 33 (1959)CrossRefGoogle Scholar
  71. 7.64
    N.G. Einspruch: Solid State Physics 17, 243 ( Academic, New York 1965 )Google Scholar
  72. 7.65
    M. Pomerantz: Proc. IEEE 53, 1438 (1965)CrossRefGoogle Scholar
  73. 7.66
    D.L. White: J. Appl. Phys. 33, 2547 (1962)CrossRefGoogle Scholar
  74. A.R. Hutson, D.L. White: J. Appl. Phys. 33, 40 (1962)CrossRefGoogle Scholar
  75. 7.67
    N.I. Meyer, M.H. Jörgensen: Festkörper-Probleme X, 21 ( Vieweg, Braunschweig 1970 )Google Scholar
  76. 7.68
    D.L. White, E.T. Handelman, J.T. Hanlon: Proc. Ieee 53, 2157 (1965)CrossRefGoogle Scholar
  77. 7.69
    J.H. McFee: J. Appl. Phys. 34, 1548 (1963)CrossRefGoogle Scholar
  78. 7.70
    M. Cardona (ed.): Light Scattering in Solids, 2nd edn., Topics Appl. Phys., Vol. 8 ( Springer, Berlin, Heidelberg 1982 )Google Scholar
  79. 7.71
    M. Cardona, G. Güntherodt (eds.): Light Scattering in Solids II and III, Topics Appl. Phys., Vols.50 and 51 (Springer, Berlin, Heidelberg 1982 )Google Scholar
  80. 7.72
    W. Wettling: In Semiconducting Compounds, ed. by D.G. Thomas ( Benjamin, New York 1967 ) p. 928Google Scholar
  81. 7.73
    K. Hess, H. Kuzmany: Proc. Int’l Conf. Phys. Semicond, Warsaw 1972, ed. by M. Miasek ( PWN-Polish Scientific Publ., Warsaw 1972 ) p. 1233Google Scholar
  82. 7.74
    P.K. Tien: Phys. Rev. 171, 970 (1968)CrossRefGoogle Scholar

Copyright information

© Springer-Verlag Berlin Heidelberg 1997

Authors and Affiliations

  • Karlheinz Seeger
    • 1
    • 2
  1. 1.WienAustria
  2. 2.Institut für MaterialphysikUniversität WienWienAustria

Personalised recommendations