Elementary Properties of Semiconductors

  • Karlheinz Seeger
Part of the Springer Series in Solid-State Sciences book series (SSSOL, volume 40)


A consequence of the discovery of electricity was the observation that metals are good conductors while nonmetals are poor conductors. The latter were called insulators. Metallic conductivity is typically between 106 and 104(Ωcm)−1, while typical insulators have conductivities of less than 10−10(Ωcm)−1. Some solids with conductivities between 104 and 10−16(Ωcm)−1 are classified as semiconductors. However, substances such as alkali-halides whose conductivity is due to electrolytic decomposition shall be excluded. Also we restrict our discussion to chemically uniform, homogeneous substances and prefer those which can be obtained in monocrystalline form. Even then we have to distinguish between semiconductors and semimetals. This distinction is possible only as a result of thorough investigation of optical and electrical properties and how they are influenced by temperature, magnetic field, etc. Without giving further explanations at this stage, the statement is made that semiconductors have an energy gap while semimetals and metals have no such gap. However, very impure semiconductors show a more or less metallic behavior and with many substances, the art of purification by, e.g., zone refining [1.1, 2] is not so far advanced that a distinction can easily be made. The transition between semiconductors and insulators is even more gradual and depends on the ratio of the energy gap to the temperature of investigation. Very pure semiconductors become insulators when the temperature approaches the absolute zero.


Unable to display preview. Download preview PDF.

Unable to display preview. Download preview PDF.


  1. 1.1
    F. Rosenberger: Fundamentals of Crystal Growth I, Springer Ser. Solid-State Sci., Vol. 5 ( Springer, Berlin, Heidelberg 1981 )Google Scholar
  2. 1.2
    A.A. Chernov (ed.): Modern Crystallography III, Springer Ser. Solid-State Sci., Vol. 36 ( Springer, Berlin, Heidelberg 1984 )Google Scholar
  3. 1.3
    C.K. Chiang, C.R. Fincher, Jr., Y.W. Park, A. J. Heeger, H. Shirakawa, E.J. Louis, S.C. Gau, A.G. MacDiarmid: Phys. Rev. Lett. 39, 1098 (1977)Google Scholar
  4. 1.4
    R.B. Adler, A.C. Smith, R.L. Longini: Introduction to Semiconductor Physics ( Wiley, New York 1964 )Google Scholar
  5. 1.5
    J.M. Meese: Neutron Transmutation Doping in Semiconductors ( Plenum, New York 1979 )CrossRefGoogle Scholar
  6. 1.6
    G. Bertolini, A. Coche: Semiconductor Detectors ( North-Holland, Amsterdam 1968 )Google Scholar
  7. 1.7
    G. Dearnally, D.C. Northrop: Semiconductor Counters for Nuclear Radiations (Spon, London 1966 )Google Scholar
  8. 1.8
    G. Mandel: Phys. Rev. 134, A1073 (1964)CrossRefGoogle Scholar

Copyright information

© Springer-Verlag Berlin Heidelberg 1997

Authors and Affiliations

  • Karlheinz Seeger
    • 1
    • 2
  1. 1.WienAustria
  2. 2.Institut für MaterialphysikUniversität WienWienAustria

Personalised recommendations