Advertisement

High-intensity, oxygen cluster ion beam generation and its application to cluster ion-assisted deposition

  • J. Matsuo
  • E. Minami
  • M. Saito
  • N. Toyoda
  • H. Katsumata
  • I. Yamada
Conference paper

Abstract

Oxide film formation using high-intensity oxygen cluster ion beams has been developed. This deposition process uses large cluster ions, which can transport thousands of atoms per ion with very low energy per constituent atom. As a result, the interactions between the cluster and substrate atoms occur in the near-surface region, and cluster ions can deposit their energy with a high density in a very localized surface region. Enhancement of the oxidation reactions is clearly demonstrated. High-quality tin-doped indium-oxide (ITO) films, which are widely used in electrical and optical devices, are formed. Very smooth, highly transparent (>80%) and low-resistivity (< 4 × 10−4 Ω cm, which are the lowest values for films grown at room temperature) films, were obtained by the use of a 7 keV oxygen cluster ion beam. The energetic oxygen clusters collapsed at the surface and reacted with the metal atoms, and about 10% of them were incorporated when the kinetic energy of the cluster ion was above 5 keV. Oxidation reaction can be enhanced by energetic cluster ion bombardment, which offers a new technique for ion-assisted thin-film formation.

PACS

36.40.-c Atomic and molecular clusters 

Preview

Unable to display preview. Download preview PDF.

Unable to display preview. Download preview PDF.

References

  1. 1.
    I. Yamada, W,L. Brown, J.A. Northby, M. Sosnowski: Nucl. Instrum, Methods B 79, 223 (1993)ADSGoogle Scholar
  2. 2.
    J. Matsuo, N. Toyoda, I. Yamada:. J. Vac. Sci. Technol. B 14, 3951 (1996)CrossRefGoogle Scholar
  3. 3.
    M. Akizuki, 3. Matsuo, S. Ogasawara, M. Harada, A. Doi, L Yamada: Jpn. J. Appl. Phys. 35, 1450 (1996)ADSCrossRefGoogle Scholar
  4. 4.
    J. Niatsuo, H, Abe, G,H. Takaoka, I. Yamada: Nile!. In-strum. Methods B 99, 244 (1995)CrossRefGoogle Scholar
  5. 5.
    M. Akizuki.3. Matsuo, Ni. Harada, S. Ogasawara, A. Doi, I. Yamada: Mater. Sci. Eng. A 217–218, 78 (1995)Google Scholar
  6. 6.
    I. Yamada, J. Matsuo: Mater. Res. Soc. Symp. Proc, 396, 149 (1996)CrossRefGoogle Scholar
  7. 7.
    H. Kitani, N. Toyoda, J. Matsuo, I. Yamada.: Nucl. Tu-strum. Methods B 121, 489 (1997)ADSCrossRefGoogle Scholar
  8. 8.
    S. T. Aoki, J. Matsuo, Z. Insepov, I. Yamada: Nucl. Instrum. Methods B 121, 49 (1997)ADSCrossRefGoogle Scholar
  9. 9.
    Yamada, J. Matsuo, Z. Insepov, D. Takeuchi. M. Akizuki, N. Toyoda: J. Vac. Sci. Technol. A 14, 781 (1996)ADSGoogle Scholar
  10. 10.
    M. Akizuki, J. Matsuo, M. Harada, S. Ogasawara, A. Doi, Yoneda, T. Yamaguchi, C.H. Takaoka, C.E. Ascheron.Google Scholar
  11. I. Yamada: Nucl. Instrurri. Methods B 99, 229 (1995)ADSCrossRefGoogle Scholar
  12. 11.
    R. Beuhler, L. Friedman: Chem. Rev. 86, 521 (1986)CrossRefGoogle Scholar
  13. 12.
    F. Hagena: Rev. Sci. Instrum. 63, 2374 (1992)ADSCrossRefGoogle Scholar
  14. 13.
    J. Matsuo, W. Qin, M. Akizuki, T. Yodoshi, I. Yamada: Mater. Res. Soc. Symp. Proc. 504, 83 (1997)CrossRefGoogle Scholar
  15. 14.
    S. Kiinura, E. Murakarni, T. Warabisako, H. Sunami. T. Tokuyama: IEEE Electron Device Lett, EDL-7, 38 (1986)Google Scholar
  16. 15.
    Y. Kawai, N. Konishi, J. Watanabe, T. Ohmi: Appl. Phys. Lett. 64, 2223 (1994)ADSCrossRefGoogle Scholar
  17. 16.
    S. Todorov, E.R. Possum: J. Vac, Soc. Technol. B 6, 466 (1988)CrossRefGoogle Scholar
  18. 17.
    R.B.H. Tahar, T. Ban, Y. Ohya, Y. Takahashi: J. Appl. Phys. 83, 2631 (1998)ADSCrossRefGoogle Scholar
  19. 18.
    K.L. Chopra, I. Kaur: Thin Film Devices and Applications ( Plenum, New York 1983 )CrossRefGoogle Scholar
  20. 19.
    R.P. Howson, L Safi, G.W. Hall, N. Danson: Nucl. Instrum. Methods B 121, 96 (1996)ADSCrossRefGoogle Scholar
  21. 20.
    Y. Suzuki, F. Minx), S. Okada, M. Yoshida: International Symposium Digest of Technical Paper SID, xviii±996, 943 (1994)Google Scholar

Copyright information

© Springer-Verlag Italia 1999

Authors and Affiliations

  • J. Matsuo
    • 1
  • E. Minami
    • 1
  • M. Saito
    • 1
  • N. Toyoda
    • 1
  • H. Katsumata
    • 1
  • I. Yamada
    • 1
  1. 1.Ion Beam Engineering Experimental LaboratoryKyoto UniversitySakyo, KyotoJapan

Personalised recommendations