Size reduction-induced changes in the electron and phonon spectra of Ge nanostructures in the early stages of growth
An optical study of the early stages of growth of Ge nanoparticles embedded in amorphous alumina matrix is presented here. The growth technique is based on a surface tension-driven aggregation process, which presents some similarities with the stress-driven heteroepitaxy technique. The experimental findings (from near UV to far IR, i.e., from electronic to phononic structures) can be interpreted in terms of the presence of a wetting layer together with the nanoparticles when the deposited Ge quantity is below a given value. This layer disappears when the Ge quantity is sufficiently high and the coalescence aggregation becomes the dominant process.
PACS78.66.-w Optical properties of specific thin films, surfaces, and low-dimensional structures: superlattices, quantum well structures, multilayers, and microparticles 81.10.Bk Growth from vapor 68.65.+g Low dimensional structures (superlattices, quantum well structures, multilayers): structure and nanoelectronic properties 78.30.-j Infrared and Raman spectra
Unable to display preview. Download preview PDF.
- 1.E. Sonderg.ard, Et. Kofman, P. Cheyssac, A. Stella: Surf. Sci. 364, 467 (1996)Google Scholar
- 2.C.E. Bottani, C. I’vlantini, P. Milani, M. M.,nfreclini, A. Stella, P. Tognini, P. Cheyssac, R. Kofman° Appl. Phys. Lett, 69, 2409 (1996)Google Scholar
- 4.P. Tognini, A. Stella, M. Geddo, P. Cheyssac, R. Kofman: 23th Int. Conf. Phys. Semicon. Processes 2, 1633 (1996)Google Scholar