Characterization of III-V semiconductor nanoparticles using TEM techniques
Nanoparticles of GaAs and InP have been prepared by aerosol techniques and characterized by electron microscopy methods. Through variation of the reaction temperature, it has been possible to follow how the reaction proceeds when the group-III aerosol reacts with the group-V precursor to form III-V semiconductor nanoparticles. The reaction can be followed both by the measurement of the change in particle size and the determination of the increase in the group-V element content in the particles.
PACS61.46.+w Clusters, nanoparticles, and nanocrystalline materials 61.16.Bg Transmission, reflection and scanning electron microscopy 81.20.Rg Aerosols in materials synthesis and processing
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