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Perpendicular Transport in GaAs-GaAlAs High Electron Mobility Transistors

  • J. Smoliner
  • E. Gornik
  • G. Weimann
  • K. Ploog
Conference paper
Part of the Springer Series in Solid-State Sciences book series (SSSOL, volume 83)

Abstract

The thickness of conventional GaAs-GaAlAs High Electron Mobility Transistors (HEMTs) is in the order of 1000 Å or smaller. Therefore, the perpendicular transport in such structures will strongly be influenced by tunneling effects. Investigating the tunneling current perpendicular to the GaAlAs barrier, which had a typical thickness of 500 Å on our samples, oscillatory behavior was observed in dI/dV on HEMT structures having a shallow alloyed gate contact. Using a Fowler-Nordheim tunneling theory, we were able to determine the conduction band discontinuity from the observed oscillations. The fit of the data gave a value of ΔEc/ΔEg=0.61±0.04 for aluminum concentrations of 30%, 36%, and 40%.

On samples having a semitransparent Au Schottky-gate contact the bandstructure was varied by illumination. Sharp peaks were observed in the derivative of the tunneling current after illumination at liquid helium temperature. Using a self consistent model, these peaks could be explained by resonant tunneling via subband states in the GaAlAs.

The subband energies in the two-dimensional electron gas (2DEG) were measured by tunneling spectroscopy on samples, where the tunneling process starts from an accumulation layer, and conventional structures, where the electrons tunnel from a metal electrode into the 2DEG. Self-consistent calculations were performed to determine the depletion charge from the measured subband energies. Furthermore the influence of a back-gate voltage was investigated both experimentally and theoretically.

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Copyright information

© Springer-Verlag Berlin Heidelberg 1988

Authors and Affiliations

  • J. Smoliner
    • 1
  • E. Gornik
    • 1
  • G. Weimann
    • 2
  • K. Ploog
    • 3
  1. 1.Institut für ExperimentalphysikUniversität InnsbruckInnsbruckAustria
  2. 2.Forschungsinstitut der Deutschen BundespostDarmstadtFed.Rep.of Germany
  3. 3.Max-Planck-Institut für FestkörperforschungStuttgart 80Fed.Rep.of Germany

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