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Magnetic Field Studies of Resonant and Non-resonant Tunnelling in n-(AlGa)As/GaAs Double Barrier Structures

  • L. Eaves
  • E. S. Alves
  • T. J. Foster
  • M. Henini
  • O. H. Hughes
  • M. L. Leadbeater
  • F. W. Sheard
  • G. A. Toombs
  • K. Chan
  • A. Celeste
  • J. C. Portal
  • G. Hill
  • M. A. Pate
Conference paper
Part of the Springer Series in Solid-State Sciences book series (SSSOL, volume 83)

Abstract

The electrical properties of a series of double barrier tunnelling devices with well widths between 5 and 60 nm are investigated. It is shown that the bistability effect in the current-voltage characteristics of a typical resonant tunnelling device can be removed by connecting a suitable capacitance or resistance to the device. These measurements cast serious doubt on the recent interpretation of the bistability as an intrinsic space-charge effect. In the stabilized section of the I(V) curve, at voltages above the main resonant peak, the magnetoquantum oscillations observed with BJ are used to investigate tunnelling assisted by LO phonon emission and by elastic scattering processes. The resonant tunnelling device with well width 60 nm exhibits sixteen regions of negative differential conductivity. The effect of a transverse magnetic field JB on the resonances in the I(V) characteristics is investigated. At sufficiently high magnetic field, a transition from tunnelling into hybrid magneto-electric quantised states to tunnelling into magnetically quantised cycloidal skipping states is observed.

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Copyright information

© Springer-Verlag Berlin Heidelberg 1988

Authors and Affiliations

  • L. Eaves
    • 1
  • E. S. Alves
    • 1
  • T. J. Foster
    • 1
  • M. Henini
    • 1
  • O. H. Hughes
    • 1
  • M. L. Leadbeater
    • 1
  • F. W. Sheard
    • 1
  • G. A. Toombs
    • 1
  • K. Chan
    • 1
  • A. Celeste
    • 2
    • 3
  • J. C. Portal
    • 2
    • 3
  • G. Hill
    • 4
  • M. A. Pate
    • 4
  1. 1.Department of PhysicsUniversity of NottinghamNottinghamUK
  2. 2.Department de Génie PhysiqueInstitut National des Sciences AppliquéesToulouseFrance
  3. 3.Service National des Champs IntensesCentre National de la Recherche ScientifiqueGrenobleFrance
  4. 4.Department of Electronic and Electrical EngineeringUniversity of SheffieldSheffieldUK

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