Advertisement

Vertical Electronic Transport in Semiconductor Nanostructures

  • M. A. Reed
Conference paper
Part of the Springer Series in Solid-State Sciences book series (SSSOL, volume 83)

Abstract

he investigation of vertical electronic transport in semiconductor heterojunction systems has recently undergone a renaissance due to improved epitaxial techniques in a number of material systems. Presented in this paper are investigations into a number of novel vertical transport systems. Recent advanced in microfabrication techniques have allowed the realization of structures where lateral dimensions approach those achievable with epitaxial technology. Results of transport through structures with reduced dimensionality will be presented.

Preview

Unable to display preview. Download preview PDF.

Unable to display preview. Download preview PDF.

References

  1. 1.
    L. L. Chang, L. Esaki, and R. Tsu: Appl. Phys. Lett. 24, 593 (1974).CrossRefGoogle Scholar
  2. 2.
    T.C.L.G. Sollner, W. D. Goodhue, P. E. Tannenwald, C. D. Parker, and D. D. Peck: Appl. Phys. Lett. 43, 588 (1983).CrossRefGoogle Scholar
  3. 3.
    C. I. Huang, M. J. Paulus, C. A. Bozada, S. C. Dudley, K. R. Evans, C. E. Stutz, R. L. Jones, and M. E. Cheney: Appl. Phys. Lett. 51, 121 (1987).CrossRefGoogle Scholar
  4. 4.
    E. E. Mendez, W. I. Wang, B. Ricco, and L. Esaki: Appl. Phys. Lett. 47, 415 (1985).CrossRefGoogle Scholar
  5. 5.
    F. Capasso, K. Mohammed, and A. Y. Cho: Appl. Phys. Lett. 48, 478 (1986).CrossRefGoogle Scholar
  6. 6.
    M. A. Reed, J. W. Lee, and H-L. Tsai: Appl. Phys. Lett. 49, 158 (1986).CrossRefGoogle Scholar
  7. 7.
    T. Nakagawa, T. Fujita, Y. Matsumoto, T. Kojima, and K. Ohta: Appl. Phys. Lett. 51, 445 (1987).CrossRefGoogle Scholar
  8. 8.
    M. A. Reed and J. W. Lee: Appl. Phys. Lett. 50, 845 (1987).CrossRefGoogle Scholar
  9. 9.
    W. J. Skocpol, L. D. Jackel, E. L. Hu, R. E. Howard and L. A. Fetter: Phys. Rev. Lett. 49, 951 (1982).CrossRefGoogle Scholar
  10. 10.
    K. S. Rails, W. J. Skocpol, L. D. Jackel, R. E. Howard, L. A. Fetter, R. W. Epworth and D. M. Tennant: Phys. Rev. Lett. 52, 228 (1984).CrossRefGoogle Scholar
  11. 11.
    C. T. Rogers and R. A. Buhrman: Phys. Rev. Lett. 55, 859, (1985).CrossRefGoogle Scholar
  12. 12.
    K. R. Farmer, C. T. Rogers, and R. A. Buhrman: Phys. Rev. Lett. 58, 225 (1987).CrossRefGoogle Scholar
  13. 13.
    J. N. Randall, M. A. Reed, T. M. Moore, R. J. Matyi, and J. W. Lee: J. Vac. Sci. Technol., to be published.Google Scholar
  14. 14.
    R. Dingle, A: C. Gossard, and W. Wiegmann: Phys. Rev. Lett. 33, 827 (1974).CrossRefGoogle Scholar
  15. 15.
    M. A. Reed, R. T. Bate, K. Bradshaw, W. M. Duncan, W. R. Frensley, J. W. Lee, and H.-D. Shih: J. Vac. Sci Technol. B4, 358 (1986).CrossRefGoogle Scholar
  16. 16.
    K. Kash, A. Scherer, J. M. Worlock, H. G. Craighead, and M. C. Tamargo: Appl. Phys. Lett. 49, 1043 (1986).CrossRefGoogle Scholar
  17. 17.
    J. Cibert, P. M. Petroff, G. J. Dolan, S. J. Pearton, A. C. Gossard, and J. H. English: Appl. Phys. Lett. 49, 1275 (1986).CrossRefGoogle Scholar

Copyright information

© Springer-Verlag Berlin Heidelberg 1988

Authors and Affiliations

  • M. A. Reed
    • 1
  1. 1.Central Research LaboratoriesTexas Instruments IncorporatedDallasUSA

Personalised recommendations