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GaAs Quantum Well Wire Structures: Their Fabrication by Focused Ga Ion Beam Implantation and Their Optical Properties

  • Y. Hirayama
  • H. Okamoto
Conference paper
Part of the Springer Series in Solid-State Sciences book series (SSSOL, volume 83)

Abstract

Interdiffusion of Al and Ga at the GaAs/AlGaAs heterointerface is enhanced by focused Ga ion beam implantation and subsequent annealing. Quantum well wire structures are fabricated using this interdiffusion enhancement resulting from focused Ga ion beam raster scanning. Fabricated structures reveal multiple fine structures in their low temperature photoluminescence and its excitation spectra. These multiple fine structures are considered to originate from the density of states specific to one-dimensional carrier systems.

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Copyright information

© Springer-Verlag Berlin Heidelberg 1988

Authors and Affiliations

  • Y. Hirayama
    • 1
  • H. Okamoto
    • 1
  1. 1.NTT Basic Research LaboratoriesMusashino-shi, Tokyo 180Japan

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