Electron-Beam Lithography of Ultra-Submicron Devices
In the ultra-submicron device area, in which individual feature sizes can be as small as a few tens of nanometers and comparable to the inelastic mean free path of the electrons, many novel new concepts arise. These can include ballistic transport and cooperative effects such as Bloch oscillations. In this paper, we discuss the use of high resolution electron-beam lithography for the fabrication of such ultra-submicron devices. The appearance of ballistic transport in MESFETs and of the possible Bloch oscillations in suitably prepared surface superlattices will be discussed.
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