Fabrication and Optical Characterization of Semiconductor Quantum Wires

  • A. Forchel
  • B. E. Maile
  • H. Leier
  • R. Germann
Conference paper
Part of the Springer Series in Solid-State Sciences book series (SSSOL, volume 83)


We have investigated different approaches to effectively one dimensional III-V semiconductor structures (quantum wires) with dimensionality dependent optical properties. The quantum wires are defined by high resolution electron-beam. lithography. By dry etching or selective implantation induced interdiffusion the patterns are transferred into the semiconductor material. The nanometer structures are analyzed by photoluminescence spectroscopy. In etched GaAs/GaAlAs wires we observe a strong decay of the quantum efficiency as the lateral width is reduced. This can be related to the high surface recombination velocity and surface depletion in GaAs. In InGaAs/ InP quantum wires, in contrast, the quantum efficiency is only weakly affected by surface effects. Using implantation induced interdiffusion we have defined buried quantum wire structures in GaAs/Ga.A1As. The photoluminescence spectra show clear lateral quantization effects.


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Copyright information

© Springer-Verlag Berlin Heidelberg 1988

Authors and Affiliations

  • A. Forchel
    • 1
  • B. E. Maile
    • 1
  • H. Leier
    • 1
  • R. Germann
    • 1
  1. 1.4. Physikalisches InstitutUniversität StuttgartStuttgart 80Fed.Rep.of Germany

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