Resonant Tunneling Barrier Structures and Their Applications to the Resonant Tunneling Hot Electron Transistor
In 1981, we started to develop a new ultrahigh-speed device with a multilayer structure of III-V compound semiconductors, as one of the future electron devices. The device was required to exhibit new functions based on quantum mechanical effects and to operate faster than any conventional devices. Recently, we developed a resonant tunneling hot electron transistor (RHET)  which has a resonant tunneling barrier (RTB) structure as an emitter barrier and exhibits new functions due to the negative differential resistance (NDR) of the RTB structure. In this paper, we describe an RHET — one of the most promising candidates for the future electron devices — and extremely excellent NDR characteristics of device-quality RTB structures grown by MBE which lead to much improved device performance of RHET.
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