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MOSFETs Under Electrical Stress — Degradation, Subthreshold Conduction, and Noise in a Submicron Structure

  • F. Koch
  • M. Bollu
  • A. Asenov
Conference paper
Part of the Springer Series in Solid-State Sciences book series (SSSOL, volume 83)

Abstract

We show that electrical degradation of a micron-sized FET device leads to a submicron structure with interesting transport properties. The conductance gate voltage characteristic of a degraded FET shows evidence for quantum effects in the form of a resonant-tunneling process which causes a peak-to-valley conductivity change by many orders of magnitude. Noise is observed from single trap states created by the electrical stress.

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Copyright information

© Springer-Verlag Berlin Heidelberg 1988

Authors and Affiliations

  • F. Koch
    • 1
  • M. Bollu
    • 1
  • A. Asenov
    • 2
  1. 1.Physik-DepartmentTechnische Universität MünchenGarchingFed.Rep.of Germany
  2. 2.Institute of MicroelectronicsSofiaBulgaria

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