Physics of One-Dimensional MOSFETs

  • A. Hartstein
Conference paper
Part of the Springer Series in Solid-State Sciences book series (SSSOL, volume 83)


During the past several years many studies have been made on the conductance of quasi-one-dimensional MOSFET systems [1–13]. Related physics has also been explored in GaAs structures [14–16]. One of the key reasons that one would like to use either the MOSFET system or the heteiojunction system for these studies is that the Fermi energy is controllable in these systems by the appropriate application of voltage biases or by charging effects. This gives the experimenter a very important parameter to vary in order to understand the proper description of the physics.


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Copyright information

© Springer-Verlag Berlin Heidelberg 1988

Authors and Affiliations

  • A. Hartstein
    • 1
  1. 1.IBM Research DivisionT.J. Watson Research CenterYorktown HeightsUSA

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