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Transport Physics in Ultra-Submicron Devices

  • D. K. Ferry
Conference paper
Part of the Springer Series in Solid-State Sciences book series (SSSOL, volume 83)

Abstract

Technology is rapidly pushing to the fabrication of ULSI “chips”, in which individual devices have critical dimensions (e.g. gate lengths) well below 1 µm. Within the next decade or so, we will see the push to reduce these dimensions even further; to well below 0.1–0.2 µm. At this scale, many new and interesting effects, which are currently treated as only high order corrections, will begin to dominate the device performance. Several of these effects are tunneling, surface superlattices, ballistic transport, and quantum interference effects. In this paper, we will treat a few such effects, leaving to other papers in this volume the treatment of further effects. Finally, we treat the need to develop a conceptual non-equilibrium quantum transport theory to handle these problems in realistic device structures.

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Copyright information

© Springer-Verlag Berlin Heidelberg 1988

Authors and Affiliations

  • D. K. Ferry
    • 1
  1. 1.Center for Solid State Electronics ResearchArizona State UniversityTempeUSA

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