Hopping Transport in One-Dimensional Semiconductor Systems
The channel conductance of a one-dimensional MOSFET shows reproducible irregular structure as a function of gate voltage when the device is operated near threshold at low temperatures. The voltage scale on which the structure occurs is in the order of kBT/e. The conductance variations amount to many orders of magnitude when T is taken down into the millikelvin range. These features suggest that the observed structure is due to incoherent hopping. We calculate the conductivity due to this process for a one-dimensional system both numerically and (in an average sense) using percolation theory. The two calculations are in excellent numerical agreement and reproduce the general features of the experimental data.
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