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Electron Beam Lithography and Dry Etching Techniques for the Fabrication of Quantum Wires in GaAs and AlGaAs Epilayer Systems

  • S. P. Beaumont
  • C. D. W. Wilkinson
  • S. Thoms
  • R. Cheung
  • I. McIntyre
  • R. P. Taylor
  • M. L. Leadbeater
  • P. C. Main
  • L. Eaves
Conference paper
Part of the Springer Series in Solid-State Sciences book series (SSSOL, volume 83)

Abstract

Research on transport in low dimensional semiconductor systems has recently progressed from simple layered structures to patterned devices of much greater complexity. The development of fabrication techniques capable of machining materials to quantum dimensions has been partly responsible for this interest. Many fascinating phenomena have been investigated in such structures, including localisation and trapping effects, universal conductance fluctuations[1], Aharanov-Bohm oscillations[2] and quenching of the Hall effect[3]. In this paper the technology for fabricating quantum wire and related structures in GaAs and GaAs-AlGaAs is described and some measurements of quantum interference phenomena in n+ GaAs wires are presented.

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Copyright information

© Springer-Verlag Berlin Heidelberg 1988

Authors and Affiliations

  • S. P. Beaumont
    • 1
  • C. D. W. Wilkinson
    • 1
  • S. Thoms
    • 1
  • R. Cheung
    • 1
  • I. McIntyre
    • 1
  • R. P. Taylor
    • 2
  • M. L. Leadbeater
    • 2
  • P. C. Main
    • 2
  • L. Eaves
    • 2
  1. 1.Nanoelectronics Research Centre, Department of Electronics and Electrical EngineeringUniversity of GlasgowGlasgowScotland, UK
  2. 2.Department of PhysicsUniversity of NottinghamNottinghamUK

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