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Transport Properties of Narrow, Variable Width Channels in the 2DEG of a GaAs:AlGaAs Heterojunction

  • T. J. Thornton
  • C. J. B. Ford
  • D. A. Wharam
  • R. Newbury
  • M. Pepper
  • H. Ahmed
  • J. E. F. Frost
  • D. C. Peacock
  • D. A. Ritchie
  • G. A. C. Jones
Conference paper
Part of the Springer Series in Solid-State Sciences book series (SSSOL, volume 83)

Abstract

At low temperatures electron transport in narrow channels is markedly different to that expected from the classical Boltzmann conductance. These differences arise because of the wavelike nature of the electrons resulting in quantum interference between coherent electrons and the formation of one dimensional subbands. To observe electron interference the channel must have dimensions of the order of the phase breaking length Lø. In addition, the one dimensional density of states can manifest itself under certain situations if the width of the channel is not much larger than the Fermi wavelength λF. To explore this regime we have made use of the high mobility two dimensional electron gas (2DEG) formed at the the interface of a modulation doped GaAs:AlGaAs heterojunction. Schottky barrier gates deposited on the surface of the heterojunction are used to define Hall bar geometries, ring structures and narrow constrictions by electrostatic confinement.

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Copyright information

© Springer-Verlag Berlin Heidelberg 1988

Authors and Affiliations

  • T. J. Thornton
    • 1
  • C. J. B. Ford
    • 1
  • D. A. Wharam
    • 1
  • R. Newbury
    • 1
  • M. Pepper
    • 1
  • H. Ahmed
    • 1
  • J. E. F. Frost
    • 1
  • D. C. Peacock
    • 1
    • 2
  • D. A. Ritchie
    • 1
  • G. A. C. Jones
    • 1
  1. 1.Cavendish LaboratoryUniversity of CambridgeCambridgeUK
  2. 2.GEC Hirst Research CentreWembley, MiddlesexUK

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