Quasi-One-Dimensional Electron Channels in AlGaAs/GaAs Heterojunctions
With submicron lithography it is possible to prepare narrow inversion channels at semiconductor interfaces, in which electrons can move freely only in one direction. For experiments on such quasi-one-dimensional (1D) systems we employ AlGaAs/GaAs heterojunctions with a laterally micro-structured gates electrode. A negative gate bias is used to deplete parallel channels in the originally homogeneous two-dimensional (2D) inversion layer and thus cause a transition from 2D to 1D electronic behavior. Quantum oscillatons of the magnetoresistance as well as far infrared spectroscopy of the electronic excitations are used to characterize the transition from 2D to 1D behavior. From such experiments and with simple models we can derive 1D subband spacings, 1D electron densities and effective channel widths. Also, we can estimate the importance of many-body effects on the directly observed intersubband resonance transition between 1D subbands.
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