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Near Bandgap Photoemission of Polarized Electrons in Semiconductors

  • C. Hermann
  • H.-J. Drouhin
  • G. Lampel
Conference paper

Abstract

Photoemission of spin-polarized conduction electrons allows to analyze the spin relaxation processes inside the semiconductor and to directly evidence the internal precession related to the lack of inversion symmetry in III-V compounds. It is the principle of GaAs polarized electron sources.

PACS

75.90. +w 79.60. Eq 

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Copyright information

© Springer-Verlag Berlin Heidelberg 1990

Authors and Affiliations

  • C. Hermann
    • 1
  • H.-J. Drouhin
    • 1
  • G. Lampel
    • 1
  1. 1.Laboratoire de Physique de la Matière CondenéeeUnité de Recherche Associée au CNRS, Ecole PolytechniquePalaiseauFrance

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