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Magneto-Optic Ellipsometry

  • Mathias Schubert
Chapter
Part of the Springer Tracts in Modern Physics book series (STMP, volume 209)

Abstract

The free-charge-carrier properties effective mass m, mobility μ, and carrier concentration N are of fundamental importance for understanding basic material properties of semiconductors. N, m, and μ intriguingly combine concepts of classical (such as the effective “inertial” carrier mass) and quantum physics (e.g., the electron energy-momentum dispersion and the electron band occupation). A long term goal has been the accurate and simultaneous measurement of N, m, and μ by non-contact optical means in materials, which are part of complex layered systems, such as semiconductor heterostructures. The effective mass concept addressed here descends from the similarity with the acceleration of a body with mass m and the acceleration experienced by a free electron (or hole) due to an external force. In general, the thereby obtained effective mass is a tensor and depends on the inverse curvature of the electron energetic states versus electron-momentum dispersion (m) ij ≈(d2E/dkidkj-1[1].

Keywords

Dielectric Function Mueller Matrix Ellipsometry Data Carrier Plasma Model Dielectric Function 
These keywords were added by machine and not by the authors. This process is experimental and the keywords may be updated as the learning algorithm improves.

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Authors and Affiliations

  • Mathias Schubert
    • 1
  1. 1.Institut für Experimentelle Physik IIUniversität LeipzigLeipzigGermany

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