Study of Cutting-Edge AFM Modalities and SEM Techniques in Determining Surface Parameters of Si{111} Wafer

  • Bokka Satya SrinivasEmail author
  • Veerla Swaranalatha
  • Avvaru Venkata Narasimha Rao
  • Prem Pal
Conference paper
Part of the Springer Proceedings in Physics book series (SPPHY, volume 215)


Etching mechanism and etched surface morphology of Si{111} is totally differs from that of the other orientations. It has slowest etch rate in all kinds of wet anisotropic etchants. Generally, the etched surface morphology of Si{111} much smoother than other orientations and may vary with etching parameters such as etchant type, etching temperature. To extract the accurate information of very smooth surface, characterization technique plays an important role. In this work we present the topographical analysis of etched Si{111} surfaces using SEM and AFM techniques. Etching is performed in different concentrations of tetramethylammonium hydroxide (TMAH) at two different temperatures.


Silicon (Si) Topographical Orientations Tetramethyal ammonium hydroxide (TMAH) 


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Copyright information

© Springer Nature Switzerland AG 2019

Authors and Affiliations

  • Bokka Satya Srinivas
    • 1
    Email author
  • Veerla Swaranalatha
    • 1
  • Avvaru Venkata Narasimha Rao
    • 1
  • Prem Pal
    • 1
  1. 1.MEMS & Micro/Nano Systems Laboratory, Department of PhysicsIndian Institute of TechnologyHyderabadIndia

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