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Improved Extraction of Photo-Generated Carriers in InGaN MQWSC: Effect of Staggered Quantum Wells with Triple Indium Content

  • Basant SainiEmail author
  • Sugandha Sharma
  • Ravinder Kaur
  • Suchandan Pal
  • Avinashi Kapoor
Conference paper
Part of the Springer Proceedings in Physics book series (SPPHY, volume 215)

Abstract

The use of three different indium (In) compositions in InxGa1−xN quantum wells (QWs) with staggered geometry is proposed to improve the photovoltaic properties of InGaN/GaN multiple quantum well solar cell (MQWSC). Improved lattice matching at the last QW and p-GaN interface along with staggered QWs leads to an increase in short circuit current density, resulting in an overall 45% enhancement in efficiency as compared to reference cell. The optimized MQWSC with staggered QWs solar cell shows a fill factor (FF) of 0.68 and efficiency of 1.21% under AM1.5G illumination.

Notes

Acknowledgements

This work has been supported by the Council of Scientific and Industrial Research (CSIR) through the PSC-109 network programme. Authors are thankful to the Director, CSIR–CEERI for his support and all members of Opto & MOEMS group, CSIR–CEERI for their cooperation.

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Copyright information

© Springer Nature Switzerland AG 2019

Authors and Affiliations

  • Basant Saini
    • 1
    Email author
  • Sugandha Sharma
    • 1
  • Ravinder Kaur
    • 2
  • Suchandan Pal
    • 3
  • Avinashi Kapoor
    • 1
  1. 1.Department of Electronic ScienceUniversity of DelhiNew DelhiIndia
  2. 2.Department of ElectronicsDeen Dayal Upadhyaya College, University of DelhiNew DelhiIndia
  3. 3.Optoelectronics & MOEMS GroupCSIR-CEERIPilaniIndia

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