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Studies on n-Type a-Si:H and the Influence of ITO Deposition Process on Silicon Heterojunction Solar Cells

  • Irfan M. KhorakiwalaEmail author
  • Kurias K. Markose
  • Anil Kumar
  • Nithin Chatterji
  • Pradeep Nair
  • Aldrin Antony
Conference paper
Part of the Springer Proceedings in Physics book series (SPPHY, volume 215)

Abstract

The process parameters and the properties of each layer of n-type a-Si:H/c-Si heterojunction solar cell is discussed. The n-type a-Si:H was deposited by rf PECVD by varying the gas mixture ratios, and the activation energy was estimated form the temperature dependent conductivity measurements. We have found that sputtering of ITO damages the interface passivation of a-Si:H/c-Si and a post deposition annealing was necessary to regain the life time. Silicon heterojunction solar cell with laser fired rear contacts has been fabricated showing an implied VOC of 670 mV.

Notes

Acknowledgements

We would like to thank MNRE, Government of India for the financial support through the project AMANSI under the National Solar Science fellowship. We would also like to thank NCPRE and CEN at Indian Institute of Technology Bombay for the facilities provided.

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Copyright information

© Springer Nature Switzerland AG 2019

Authors and Affiliations

  • Irfan M. Khorakiwala
    • 1
    Email author
  • Kurias K. Markose
    • 2
  • Anil Kumar
    • 1
  • Nithin Chatterji
    • 1
  • Pradeep Nair
    • 1
  • Aldrin Antony
    • 3
  1. 1.Department of Electrical EngineeringIndian Institute of Technology BombayPowai, MumbaiIndia
  2. 2.Department of PhysicsCochin University of Science and TechnologyKalamassery, CochinIndia
  3. 3.Department of Energy Science and EngineeringIndian Institute of Technology BombayPowai, MumbaiIndia

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