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Studies on the PEDOT:PSS/n-Si Hybrid Heterojunction Diode

  • Anil KumarEmail author
  • Kurias K. Markose
  • Irfan M. Khorakiwala
  • Bandana Singha
  • Pradeep R. Nair
  • Aldrin AntonyEmail author
Conference paper
Part of the Springer Proceedings in Physics book series (SPPHY, volume 215)

Abstract

Organic materials as carrier selective layers are increasingly explored towards low temperature solution processed Silicon based heterojunction solar cells. In this regard, PEDOT:PSS (poly (3,4-ethylenedioxythiophene) polystyrene sulfonate) acts as a carrier selective layer for holes, by forming a barrier for the electrons. Accordingly, here we investigate the passivation quality of PEDOT:PSS over n-type c-Si wafer and report the initial results on such heterojunction solar cells. The fabricated Ag/PEDOT:PSS/n-c-Si/n+/Al hybrid solar cell structure yielded an efficiency of 8.79%, thus indicating the viability of PEDOT:PSS as a carrier selective hole extraction layer for Si based heterojunction solar cells.

Notes

Acknowledgements

We would like to thank MNRE, Government of India for the financial support through the project AMANSI under the National Solar Science fellowship. Anil Kumar would like to thank UGC for providing Junior Research fellowship. We would also like to thank NCPRE and CEN at Indian Institute of Technology Bombay for the facilities provided.

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Copyright information

© Springer Nature Switzerland AG 2019

Authors and Affiliations

  • Anil Kumar
    • 1
    Email author
  • Kurias K. Markose
    • 2
  • Irfan M. Khorakiwala
    • 1
  • Bandana Singha
    • 3
  • Pradeep R. Nair
    • 1
  • Aldrin Antony
    • 3
    Email author
  1. 1.Department of Electrical EngineeringIndian Institute of Technology BombayPowai, MumbaiIndia
  2. 2.Department of PhysicsCochin University of Science and TechnologyCochinIndia
  3. 3.Department of Energy Science and EngineeringIndian Institute of Technology BombayPowai, MumbaiIndia

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