Evaluation of Ga:MgZnO/CIGSe Heterojunction for Realization of All Sputtered Buffer-Less Solar Cell

  • Vivek GargEmail author
  • Brajendra S. Sengar
  • Nisheka Anadkat
  • Gaurav Siddharth
  • Shailendra Kumar
  • Shaibal Mukherjee
Conference paper
Part of the Springer Proceedings in Physics book series (SPPHY, volume 215)


In this article, the valence band offset (VBOff) and conduction band offset (CBOff) values of Cu(In0.70Ga0.30)Se/3at.% Ga:Mg0.20Zn0.80O (GMZO) heterojunction, grown by dual ion beam sputtering system (DIBS), are calculated to understand the carrier transport mechanism at the heterojunction for realization of all sputtered buffer-less solar cells.



This work is partially supported by Board of Research in Nuclear Sciences (BRNS), Department of Atomic Energy (DAE), Government of India and Clean Energy Research Initiative (CERI), Department of Science and Technology (DST), Government of India. We are thankful to DIBS, FESEM, EDX and XRD facility equipped at Sophisticated Instrument Centre (SIC) at IIT Indore. The authors Vivek Garg and Brajendra S. Sengar acknowledge UGC and CSIR, respectively India for their fellowships. Nisheka Anadkat and Gaurav Siddharth acknowledge DST INSPIRE and DeitY, respectively for their fellowships. Prof. Shaibal Mukherjee is thankful to DeitY YFRF, Government of India award.


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© Springer Nature Switzerland AG 2019

Authors and Affiliations

  • Vivek Garg
    • 1
    Email author
  • Brajendra S. Sengar
    • 1
  • Nisheka Anadkat
    • 1
  • Gaurav Siddharth
    • 1
  • Shailendra Kumar
    • 2
  • Shaibal Mukherjee
    • 1
  1. 1.Hybrid Nanodevice Research Group (HNRG)Electrical Engineering, Indian Institute of TechnologyIndoreIndia
  2. 2.Raja Ramanna Center for Advanced TechnologyIndoreIndia

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