Structural and Optical Characterization of InGaN/GaN Based Quantum Well Structures Grown by MOCVD
The InGaN/GaN based Quantum Well structures were grown on c-plane sapphire substrate using metal-organic chemical vapor deposition. Crystalline quality has been investigated using High-resolution X-ray diffraction (HRXRD) analysis and total dislocation densities of screw and edge types in the GaN epilayer have been calculated. The thickness and indium composition of the InGaN was determined by HRXRD. From simulation fit, the composition of indium was found to be 12 and 15% and InGaN thickness was 5 nm. The pseudomorphic growth is observed for InGaN layers as confirmed by X-ray reciprocal space mapping. Room-temperature time-resolved photoluminescence, photoluminescence measurements have been performed on InGaN/GaN based Quantum Well Structures. The photoluminescence intensity and wavelength was found to get enhanced. Time-resolved photoluminescence measurement revealed interesting observation of longer (392 ps) decay time for the InGaN (5 nm)/GaN QW structures.
The authors gratefully acknowledge the Department of Science and Technology (DST/TM/SERI/2K12/71(G)), Government of India for funding the research project under SERI.
- 2.T.H. Seo, J.P. Shim, S.J. Chae, G. Shin, B.K. Kim, D.S. Lee, E.K. Suh, Improved photovoltaic effects in InGaN-based multiple quantum well solar cell with graphene on indium tin oxide nanodot nodes for transparent and current spreading electrode. Appl. Phys. Lett. 102, 031116 (2013)ADSCrossRefGoogle Scholar
- 3.K. Prabakaran et.al., Growth and characterization of InXGa1-xN/GaN single quantum well prepared by MOCVD, in AIP Conference Proceedings, vol. 1665, no. 1 (2015), p. 120024Google Scholar
- 4.B. Xu, H.T. Dai, S.G. Wang, F.C. Chu, C.H. Huang, S.F. Yu, R.M. Lin, Using pre-TMIn treatment to improve the optical properties of green light emitting diodes. Int. J. Photon Energy, Article ID 95256, 1–64 (2014)Google Scholar