MoO3 as Hole-Selective Contact for Diffusion-Free Solar Cells
Studies on MoO3 are reported to analyze its feasibility as a hole-selective front contact in diffusion free solar cells. The deposited layers passivate the silicon surface reasonably well, since surface recombination velocity of less than 20 cm/s was observed. The lifetime decreased after deposition of transparent conducting oxide and was regained by annealing at low temperature. The transmittance after TCO deposition is more than 80% in the visible region. The final solar cells fabricated using electron selective titanium dioxide film as the rear contact were 7.10% efficient.
We acknowledge the support of Ministry of New and Renewable Energy, Solar Energy Research Institute of India and United States (SERIIUS), National Centre for Photovoltaic Research and Education (NCPRE) and Centre for Excellence in Nanoelectronics (CEN).
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