Terahertz Properties of GaN/AlGaN Heterostructure IMPATT Diode
Conference paper
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Abstract
The terahertz properties of a Double Drift Region (DDR) heterostructure IMPATT diode, based on GaN/A1GaN, are simulated for operation around 0.5 THz. The device DC to RF conversion efficiency of 17.1% and a noise measure of 21 dB, expected from the heterostructure GaN/A1GaN IMPATT diode, are noteworthy.
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