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Growth and Characterization of Gallium Nitride Nanowires on Nickel/Sapphire Template by Chemical Vapour Deposition

  • Sankaranarayanan SanjayEmail author
  • Prabakaran Kandasamy
  • Shubra Singh
  • Krishnan Baskar
Conference paper
Part of the Springer Proceedings in Physics book series (SPPHY, volume 215)

Abstract

The growth behaviour of gallium nitride nanowires grown on nickel/sapphire template has been investigated. The nanowires were grown using chemical vapour deposition method by vapour-liquid-solid process. The growth was carried out by maintaining the growth temperature and carrier gas flow rate as constants, while the time of growth was altered between 0.5 and 1.5 h. The peaks obtained using X-ray diffractometer confirmed the crystalline nature of the samples. The scanning electron microscopy results revealed the stage by stage growth morphologies of the samples. Average diameter of the nanowires was found to be ~300 nm with lengths up to a few micrometers. Based on the characteristic spectra obtained from UV-Vis spectrometer, bandgap of the nanowires was estimated to be 3.3 eV.

Notes

Acknowledgements

The authors thank the financial assistance from the Dept. of Science and Technology (DST), Govt. of India [Grant No: DST/TM/SERI/2K12/71(G)].

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Copyright information

© Springer Nature Switzerland AG 2019

Authors and Affiliations

  • Sankaranarayanan Sanjay
    • 1
    Email author
  • Prabakaran Kandasamy
    • 1
  • Shubra Singh
    • 1
  • Krishnan Baskar
    • 1
    • 2
  1. 1.Crystal Growth CentreAnna UniversityChennaiIndia
  2. 2.Manonmaniam Sundaranar UniversityTirunelveliIndia

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