Growth and Characterization of Gallium Nitride Nanowires on Nickel/Sapphire Template by Chemical Vapour Deposition
The growth behaviour of gallium nitride nanowires grown on nickel/sapphire template has been investigated. The nanowires were grown using chemical vapour deposition method by vapour-liquid-solid process. The growth was carried out by maintaining the growth temperature and carrier gas flow rate as constants, while the time of growth was altered between 0.5 and 1.5 h. The peaks obtained using X-ray diffractometer confirmed the crystalline nature of the samples. The scanning electron microscopy results revealed the stage by stage growth morphologies of the samples. Average diameter of the nanowires was found to be ~300 nm with lengths up to a few micrometers. Based on the characteristic spectra obtained from UV-Vis spectrometer, bandgap of the nanowires was estimated to be 3.3 eV.
The authors thank the financial assistance from the Dept. of Science and Technology (DST), Govt. of India [Grant No: DST/TM/SERI/2K12/71(G)].
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