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Performance of Wide Band Gap Semiconductors Impatts at THz Frequencies

  • S. P. PatiEmail author
Conference paper
Part of the Springer Proceedings in Physics book series (SPPHY, volume 215)

Abstract

Computer simulation experiment on studies of RF characteristics of high band gap ZnS (3.68 eV) based flat doped p+pnn+ DD Impatt diodes indicate possible generation of high mm wave-power with sufficiently high efficiency and considerable low noise. The interesting features are the realization of very high breakdown voltage (661 V at 12 GHz) and high efficiency (28.1%). The magnitudes of RF negative resistance and avalanche noise for ZnS diode are respectively higher by three times and lower by more than an order compared to Impatts based on conventional low band gap (ex-Si) semiconductors. Performance of Impatt Devices at THz frequencies based on other Wide Band Semiconductors like GaN, SiC and others. The results indicate some favorable features.

Copyright information

© Springer Nature Switzerland AG 2019

Authors and Affiliations

  1. 1.National Institute of Science and TechnologyBerhampurIndia

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