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Trapping Phenomenon in AlInN/GaN HEMTs: A Study Based on Drain Current Transient Spectroscopy

  • Ayush KhandelwalEmail author
  • Gourab Dutta
  • Amitava DasGupta
  • Nandita DasGupta
Conference paper
Part of the Springer Proceedings in Physics book series (SPPHY, volume 215)

Abstract

In this paper, we have investigated the trapping phenomenon in AlInN/GaN HEMTs using the drain current transient spectroscopy. From the trapping and detrapping drain current transient analysis under different biasing conditions, energy levels and locations of associated traps are extracted. Surface traps with activation energy of ~0.18 eV and buffer traps of energy ~0.27 eV were identified from this analysis. Hopping conduction of trapped surface electrons are also identified from this study.

References

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Copyright information

© Springer Nature Switzerland AG 2019

Authors and Affiliations

  • Ayush Khandelwal
    • 1
    Email author
  • Gourab Dutta
    • 1
  • Amitava DasGupta
    • 1
  • Nandita DasGupta
    • 1
  1. 1.Microelectronics and MEMS Laboratory, Department of Electrical EngineeringIndian Institute of Technology MadrasChennaiIndia

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