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Calculation of Quantum Capacitance and Sheet Carrier Density of Graphene FETs

  • S. R. PattanaikEmail author
  • Sriyanka Behera
  • G. N. Dash
Conference paper
Part of the Springer Proceedings in Physics book series (SPPHY, volume 215)

Abstract

We have done a simulation study on the quantum capacitance and sheet carrier density of graphene MOSFETs following a quasianalytical model for graphene MOSFET with gapless large area graphene channel (Thiele et al. in JAP 107:094505, 2010 [1]). First, the simulation model has been validated by properly reproducing the values of quantum capacitance for a graphene MOSFET without back-gate and zero applied drain-source voltage. Next, we have investigated the effect of both top-gate and back-gate voltages on the quantum capacitance and sheet carrier density and the results are presented here.

Notes

Acknowledgements

Sriyanka Behera wishes to thank the Department of Science and Technology, Government of India for the INSPIRE fellowship to carry out this work.

References

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Copyright information

© Springer Nature Switzerland AG 2019

Authors and Affiliations

  • S. R. Pattanaik
    • 1
    Email author
  • Sriyanka Behera
    • 2
  • G. N. Dash
    • 2
  1. 1.National Institute of Science and TechnologyBerhampurIndia
  2. 2.School of PhysicsSambalpur UniversityBurla, SambalpurIndia

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