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60Coγ Irradiation Effects on IV Characteristics of AlGaN/GaN Schottky Diodes

  • Chandan SharmaEmail author
  • Robert Laishram
  • Amit
  • D. S. Rawal
  • Seema Vinayak
  • Rajendra Singh
Conference paper
Part of the Springer Proceedings in Physics book series (SPPHY, volume 215)

Abstract

AlGaN/GaN Schottky diodes of variable area have been exposed to gamma radiation. These diodes have been irradiated up to a cumulative dose of 104 Gy. The effect of gamma irradiation on the current–voltage (IV) characteristics of the diodes before and after gamma exposure has been investigated. The IV characteristics show a shift in the turn-on voltage and improvement in the reverse Schottky current after the irradiation. Parameters like Schottky barrier height and ideality factor has also been calculated from the diode characteristics.

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Copyright information

© Springer Nature Switzerland AG 2019

Authors and Affiliations

  • Chandan Sharma
    • 1
    • 2
    Email author
  • Robert Laishram
    • 1
  • Amit
    • 1
  • D. S. Rawal
    • 1
  • Seema Vinayak
    • 1
  • Rajendra Singh
    • 2
  1. 1.Solid State Physics LaboratoryNew DelhiIndia
  2. 2.Indian Institute of Technology DelhiNew DelhiIndia

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