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Device Optimization of E-Mode N-Polar GaN MOS-HEMT for Low Noise RF and Microwave Applications

  • D. K. Panda
  • T. R. LenkaEmail author
Conference paper
Part of the Springer Proceedings in Physics book series (SPPHY, volume 215)

Abstract

In this paper the effect of different device parameters on noise performance of enhancement mode N-polar GaN MOS-HEMT is investigated. Different device parameters like gate length, gate geometry, gate position, oxide thickness and AlGaN composition, are varied using TCAD simulations to access the noise performance of the device. The variation of different noise parameters such as minimum noise figure and noise resistance at different frequency with respect to the device parameters are studied.

Notes

Acknowledgements

The authors acknowledge TEQIP-II for facilitating Silvaco TCAD and Keysights’s ADS tool in Department of ECE, NIT Silchar for carrying out the research work.

References

  1. 1.
    D.K. Panda, T.R. Lenka, Modeling and simulation of enhancement mode p-GaN Gate AlGaN/GaN HEMT for RF circuit switch applications. J. Semiconductors (IOP Science) 38(6) (2017)ADSCrossRefGoogle Scholar
  2. 2.
    T.R. Lenka, A.K. Panda, AlGaN/GaN-based HEMT on SiC-substrate for microwave characteristics using different passivation layers. Pramana-J Phys. (Springer) 79(1), 151–163 (2012)ADSCrossRefGoogle Scholar
  3. 3.
    D. Panda, T.R. Lenka, Effects of trap density on drain current LFN and its model development for E-mode GaN MOS-HEMT, in Superlattices and Microstructures (Elsevier, 2017).  https://doi.org/10.1016/j.spmi.2017.09.045ADSCrossRefGoogle Scholar
  4. 4.
    D. Panda, T.R. Lenka, Oxide thickness dependent compact model of channel noise for E-mode AlGaN/GaN MOS-HEMT. AEU-Int. J. Electron. Commun. 82, 467–473 (Elsevier, 2017).  https://doi.org/10.1016/j.aeue.2017.09.025CrossRefGoogle Scholar
  5. 5.
    M. Chen, W. Sutton, I. Smorchkova, B. Heying, W. Ben Luo, V. Gambin et al., A 1–25 GHz GaN HEMT MMIC low-noise amplifier. IEEE Microw. Wirel. Compon. Lett. 20(10), 563–565 (2010)CrossRefGoogle Scholar
  6. 6.
    U. Singisetti, M.H. Wong, U.K. Mishra, High-performance N-polar GaN enhancement-mode device technology. Semicond. Sci. Technol. (IOP Science) 28(7) (2013)ADSCrossRefGoogle Scholar
  7. 7.
    C.H. Oxley, Calculation of minimum noise figure using the simple Fukui equation for gallium nitride (GaN) HEMTs. Solid-State Electron. (Elsevier) 45(5), 677–682 (2001)ADSCrossRefGoogle Scholar
  8. 8.
    G.H. Jessen, R.C. Fitch, J.K. Gillespie, J. Via, A. Crespo, D. Langley, D.J. Denninghoff, M. Trejo, E.R. Helle, Short-channel effect limitations on high-frequency operation of AlGaN/GaN HEMTs for T-gate devices. IEEE Trans. Electron Devices 54(10), 2589–2597 (2007)ADSCrossRefGoogle Scholar

Copyright information

© Springer Nature Switzerland AG 2019

Authors and Affiliations

  1. 1.Microelectronics and VLSI Design Group, Department of Electronics and Communication EngineeringNational Institute of TechnologySilcharIndia

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