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Modelling DC, RF and Noise Behavior of AlGaN/GaN HEMT on SiC Substrate

  • Madhulika
  • Himanshu Pandey
  • Meenu Garg
  • Neelu Jain
  • Sanjeev Kumar
  • Amit Malik
  • D. S. Rawal
  • Meena Mishra
  • Arun K. SinghEmail author
Conference paper
Part of the Springer Proceedings in Physics book series (SPPHY, volume 215)

Abstract

In this chapter, DC, RF and noise behaviour of AlGaN/GaN HEMT with 1 µm gate length are studied performing computer simulations using Silvaco TCAD software. The device exhibits a maximum drain current of 645 mA/mm and maximum transconductance of the 162 mS/mm at the gate voltage of 0 and 2.5 V, respectively. The cut-off frequency (fT) and maximum oscillation frequency of about 9.74 and 32.24 GHz are estimated from the simulated results. In addition, device exhibits a minimum noise figure of 10 dB at maximum frequency of 10 GHz. The simulated results are in good agreement with experimental results suggesting AlGaN/GaN HEMT an optimal choice for high voltage and high power applications.

Keywords

2DEG GaN HEMT High frequency High power Noise figure SiC Transconductance 

Notes

Acknowledgements

Authors thank Defence Research and Development Organization, Govt. of India for financial support (CC/TM/ERIPR/GIA/16-17/008). Madhulika acknowledges the financial assistance of University Grants Commission (UGC), Government of India.

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Copyright information

© Springer Nature Switzerland AG 2019

Authors and Affiliations

  • Madhulika
    • 1
  • Himanshu Pandey
    • 1
  • Meenu Garg
    • 1
  • Neelu Jain
    • 1
  • Sanjeev Kumar
    • 2
  • Amit Malik
    • 3
  • D. S. Rawal
    • 3
  • Meena Mishra
    • 3
  • Arun K. Singh
    • 1
    Email author
  1. 1.Department of Electronics and Communication EngineeringPunjab Engineering College (Deemed to be University)ChandigarhIndia
  2. 2.Department of Applied SciencesPunjab Engineering College (Deemed to be University)ChandigarhIndia
  3. 3.Solid State Physics LaboratoryTimarpurIndia

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