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Enhanced Sheet Carrier Density in ZnO Based Heterostructure by Alloying Cadmium in Buffer Layer ZnO

  • Md Arif Khan
  • Rohit Singh
  • Ritesh Bhardwaj
  • Abhinav Kranti
  • Shaibal MukherjeeEmail author
Conference paper
Part of the Springer Proceedings in Physics book series (SPPHY, volume 215)

Abstract

This abstract reports very high (>1014 cm−2) sheet carrier density (ns) in Zinc Oxide (ZnO) based heterostructure for low Magnesium (Mg) compositions (<0.15) in barrier layer, achieved by alloying Cadmium (Cd) in buffer layer ZnO, grown by Dual Ion Beam Sputtering (DIBS) deposition technique.

Notes

Acknowledgements

Authors acknowledge sophisticated instruments center (SIC) facilities, IIT Indore. Md. Arif Khan and Ritesh Bhardwaj would like to thank DeitY, Ministry of Communications and IT, Government of India, for providing fellowship grant under Visvesvaraya Ph.D. scheme for Electronics and IT. Dr. Shaibal Mukherjee is thankful to DeitY, Ministry of Communications and IT, Government of India for Young Faculty Research Fellowship (YFRF) under Visvesvaraya Ph.D. Scheme for Electronics and IT.

References

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Copyright information

© Springer Nature Switzerland AG 2019

Authors and Affiliations

  • Md Arif Khan
    • 1
    • 2
  • Rohit Singh
    • 1
    • 2
  • Ritesh Bhardwaj
    • 1
  • Abhinav Kranti
    • 2
  • Shaibal Mukherjee
    • 1
    Email author
  1. 1.Hybrid Nanodevice Research Group (HNRG)Electrical Engineering, Indian Institute of Technology IndoreSimrol, IndoreIndia
  2. 2.Low Power Nanoelectronics Research GroupElectrical Engineering, Indian Institute of Technology IndoreSimrol, IndoreIndia

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