Performance of 4H-SiC and Wz-GaN Over InP IMPATT Devices at 1.0 THz Frequency
We have studied the performance of impact avalanche transit time (IMPATT) devices based on wide band gap semiconductor materials like 4H-SiC and Wz-GaN over low band gap InP at 1.0 tera-hertz (THz) frequencies. A drift-diffusion model is used to design double drift region (DDR) IMPATTs based on these materials. From the results, it is found that the RF power for 4H-SiC gives 26 times more than InP and 4 times than Wz-GaN based IMPATT diode. Similarly, the Wz-GaN has more noise of about 32.6 dB as compared to 4H-SiC (29.5 dB) and InP (31.5 dB). Generation of significant RF power for 4H-SiC with moderate noise is better as compared to the InP and Wz-GaN based devices. The excellent results indicate that 4H-SiC based IMPATT diodes are the future terahertz sources.
- 3.P.R. Tripathy et al., THz performance of nano dimension Si, GaAs and InP ATT devices. J. Comput. Theor. Nanosci. 20, 1695–1699 (2014)Google Scholar
- 4.H. Eisele, et al., The potential of InP IMPATT diode as high-power millimeter-wave sources: first experimental results, in IEEE MTT-S Digest, WEIE7, pp. 529–532 (1996)Google Scholar