Growth of Beta Phase Gallium Oxide Nanostructures on Sapphire Substrate by Chemical Vapour Deposition
In the present research work growth of gallium oxide nanostructures on sapphire substrates using chemical vapour deposition method at different growth time intervals is reported. A thin layer of nickel was initially sputtered on the sapphire substrates, which act as the catalyst to assist the growth. Gallium metal and water vapour were used as the precursors in the presence of nitrogen carrier gas. As grown samples were characterized to observe the changes in their structural, optical and morphological properties by Powder X-Ray Diffraction (XRD), Diffused Reflectance Spectroscopy (DRS) and Scanning Electron Microscopy (SEM) respectively. XRD results were matched with previously reported studies confirming the formation of single phase β-Ga2O3. The bandgaps were calculated, its shows the value from 4.55 eV to 4.66 eV. SEM images show the formation of nano-sheet and wires. EDX and elemental mapping revealed that growth was uniform over the sample.
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