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Analytical Modeling and Simulation Study of Homo and Hetero III-V Semiconductor Based Tunnel Field Effect Transistor (TFET)

  • M. Lakshmi Varshika
  • Rakhi Narang
  • Mridula Gupta
  • Manoj SaxenaEmail author
Conference paper
Part of the Springer Proceedings in Physics book series (SPPHY, volume 215)

Abstract

High staggered, Moderate staggered and homo junction III–V semiconductor-based heterojunction TFETs are of interest as they allow a high on–off current ratio and high on current through reduction in the tunneling barrier height. GaAsSb/InGaAs based heterojunction p-n-i-n TFET has shown an increase in the drive current when compared to homojunction due to band engineering. Further engineering can be performed by varying tunneling barrier height (Ebeff) from 0.5 to 0.25 eV using differently staggered heterojunction. Thus, the concept of halo doped heterojunction pocket TFET is presented by analytical and simulation study with varying staggered junctions.

Notes

Acknowledgements

Authors would like to thank Council of Scientific & Industrial Research (CSIR), India (File No. 22(0724)/17/EMR-II).

M. L. Varshika (ENGS3150) would like to thank the Indian Academy of Sciences for providing the opportunity to be a part of SRFP-2017.

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Copyright information

© Springer Nature Switzerland AG 2019

Authors and Affiliations

  • M. Lakshmi Varshika
    • 1
  • Rakhi Narang
    • 2
  • Mridula Gupta
    • 3
  • Manoj Saxena
    • 4
    Email author
  1. 1.Department of Electrical and ElectronicsBirla Institute of Technology and SciencePilaniIndia
  2. 2.Department of ElectronicsSri Venkateswara College, University of DelhiNew DelhiIndia
  3. 3.Department of Electronic ScienceUniversity of DelhiNew DelhiIndia
  4. 4.Department of ElectronicsDeen Dayal Upadhyay College, University of DelhiNew DelhiIndia

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