Study of Interface Trap Charges in InAs Nanowire Tunnel FET

  • Sankalp K. Singh
  • Ankur Gupta
  • Venkateshan Nagarajan
  • Deepak Anandan
  • Ramesh K. Kakkerla
  • Hung W. Yu
  • Edward Y. ChangEmail author
Conference paper
Part of the Springer Proceedings in Physics book series (SPPHY, volume 215)


The effect of Interface traps is investigated on the Homojunction Indium-Arsenide (InAs) gate all around nanowire tunneling FET (HJ-GAA-TFET). Device Ion/Ioff ratio was chosen as key Figure-of-Merit (FoM) in this investigation. Interface traps impact the flat-band voltage of the device, causing degradation in the device performance. It is observed that as the trap density increases, Ioff degrades significantly by ~3 orders in magnitude.


Band-to-band tunneling (BTBT) Interface trap charge (ITC) Sub-threshold swing (SS) Tunnel FET (TFET) 



This work was sponsored by the TSMC, NCTU-UCB I-RiCE program, Ministry of Science and Technology, Taiwan, under Grant No. MOST 106-2911-I-009-301


  1. 1.
    A.M. Ionescu, H. Riel, Tunnel field-effect transistors as energy efficient electronic switches. Nature 479(7373), 329–337 (2011)ADSCrossRefGoogle Scholar
  2. 2.
    K. Boucart, A.M. Ionescu, Double-gate tunnel FET with high-k gate dielectric. IEEE Trans. Electron Devices 54, 1725 (2007)ADSCrossRefGoogle Scholar
  3. 3.
    J.P. Colinge, Multiple gate SOI MOSFETs. Solid-State Electron 48, 897 (2004)ADSCrossRefGoogle Scholar
  4. 4.
    M. Luisier, G. Klimeck, Atomistic full-band design study of InAs band-to-band tunneling field-effect transistors. IEEE Electron Device Lett. 30(6), 602–604 (2009)ADSCrossRefGoogle Scholar
  5. 5.
    H. Schmid, M.T. Björk, J. Knoch, H. Riel, W. Riess, P. Rice, T. Topuria, Patterned epitaxial vapor-liquid-solid growth of silicon nanowires on Si(111) using silane. J. Appl. Phys. 103, 24304 (2008)CrossRefGoogle Scholar
  6. 6.
    J. Westwater, D.P. Gosain, S. Usui, Control of the size and position of silicon nanowires grown via the vapor-liquid-solid technique. Jpn. J. Appl. Phys. 36, 6204–6209 (1997)ADSCrossRefGoogle Scholar
  7. 7.
    S. Glassner, C. Zeiner, P. Periwal, T. Baron, E. Bertagnolli, A. Lugstein, Multimode silicon nanowire transistors. Nano Lett. 14, 6699–6703 (2014)ADSCrossRefGoogle Scholar
  8. 8.
    C. Thelander, P. Caroff, S. Plissard, A.W. Dey, K.A. Dick, Effects of crystal phase mixing on the electrical properties of InAs nanowires. Nano Lett. 11, 2424–2429 (2011)ADSCrossRefGoogle Scholar
  9. 9.
    E.Y. Chang, C.I. Kuo, H.T. Hsu, C.Y. Chang, Y. Miyamoto, InAs thin-channel high-electron-mobility transistors with very high current-gain cutoff frequency for emerging submillimeter-wave applications. Appl. Phys. Exp. 6(3), 034001 (2013)ADSCrossRefGoogle Scholar
  10. 10.
    S. Chuang, Q. Gao, R. Kapadia, A.C. Ford, J. Guo, A. Javey, Ballistic InAs nanowire transistors. Nano Lett., 555–558 (2013)ADSCrossRefGoogle Scholar
  11. 11.
    Sentaurus Device User Guide (Synopsys, Mountain View, CA, USA, Tech. Rep., 2010)Google Scholar
  12. 12.
    J.R. Weber, A. Janotti, C.G. Van de Walle, Intrinsic and extrinsic causes of electron accumulation layers on InAs surfaces. Appl. Phys. Lett. 97(19) 2010ADSCrossRefGoogle Scholar
  13. 13.
    M.G. Pala, D. Esseni, Interface traps in InAs nanowire tunnel-FETs and MOSFETs—part I: model description and single trap analysis in tunnel-FETs. IEEE Trans. Electron Devices 60(9) (2013)Google Scholar
  14. 14.
    J. Madan, R. Chaujar, Numerical simulation of N+ source pocket PIN-GAA-tunnel FET: impact of interface trap charges and temperature. IEEE Trans. Electron Devices 64, 1482–1488 (2017)ADSCrossRefGoogle Scholar

Copyright information

© Springer Nature Switzerland AG 2019

Authors and Affiliations

  • Sankalp K. Singh
    • 1
  • Ankur Gupta
    • 2
  • Venkateshan Nagarajan
    • 1
  • Deepak Anandan
    • 1
  • Ramesh K. Kakkerla
    • 1
  • Hung W. Yu
    • 1
  • Edward Y. Chang
    • 1
    • 3
    Email author
  1. 1.Department of Materials Science and EngineeringNCTUHsinchuTaiwan
  2. 2.Centre for Applied Research in Electronics, IIT—DelhiNew DelhiIndia
  3. 3.International College of Semiconductor TechnologyNCTUHsinchuTaiwan

Personalised recommendations