Study of Interface Trap Charges in InAs Nanowire Tunnel FET
The effect of Interface traps is investigated on the Homojunction Indium-Arsenide (InAs) gate all around nanowire tunneling FET (HJ-GAA-TFET). Device Ion/Ioff ratio was chosen as key Figure-of-Merit (FoM) in this investigation. Interface traps impact the flat-band voltage of the device, causing degradation in the device performance. It is observed that as the trap density increases, Ioff degrades significantly by ~3 orders in magnitude.
KeywordsBand-to-band tunneling (BTBT) Interface trap charge (ITC) Sub-threshold swing (SS) Tunnel FET (TFET)
This work was sponsored by the TSMC, NCTU-UCB I-RiCE program, Ministry of Science and Technology, Taiwan, under Grant No. MOST 106-2911-I-009-301
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