Noise Estimation of Heterostructure GaAs/GaP Over Homostructure GaAs and GaP Based IMPATT Devices at 94.0 GHz Frequency
The potential of heterostructure based impact avalanche transit time (IMPATT) devices have been studied and compared with homostructure diode. We have studied the simulation results of DC, SS and avalanche noise estimation of new types of materials combination GaAs/GaP heterostructure and the results are compared with the homostructure GaAs and GaP materials. The diodes are design to operate at the millimeter-wave frequencies of 94 GHz. A drift-diffusion model is used to design double drift region (DDR) IMPATTs based on these materials. The simulation results of these diodes shows that GaP based IMPATT diode gives better performance in terms of RF Power as compared to other diodes. It is interesting to observe that the mean square noise voltage for GaAs/GaP is very less as compared to GaAs and GaP.
KeywordsAvalanche noise Heterostructure Impact ionization RF power
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