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Performance Optimization and Analysis of ZnO Based Green Light Emitting Diode

  • Rashmi Ranjan KumarEmail author
  • Deepak Punetha
  • Saurabh Kumar Pandey
Conference paper
Part of the Springer Proceedings in Physics book series (SPPHY, volume 215)

Abstract

ZnO based materials system have attracted lots of attention because of their broad range applications in optoelectronics devices such as Light emitting diode, photo-detectors, solarcell etc. A design approach for hetero-structure LED based on Zinc Oxide (ZnO) has been proposed emitting green electroluminescence in the range of 530–540 nm. Rigorous theoretical investigation has been performed for the device optimization to improve I-V characteristics, intensity and internal quantum efficiency. The optimization involves doping concentration, alloy composition and thickness calibrations of various constituent layers. Various aspects of band gap engineering and confinement has been taken into consideration for developing high quality zinc oxide films for device applications. These results hold the prospect for the development of green LEDs with superior performance.

Keywords

Confinement Electroluminescence Hetero-structure Wide band 

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Copyright information

© Springer Nature Switzerland AG 2019

Authors and Affiliations

  • Rashmi Ranjan Kumar
    • 1
    Email author
  • Deepak Punetha
    • 1
  • Saurabh Kumar Pandey
    • 1
  1. 1.Sensors & Optoelectronics Research Group (SORG), Discipline of Electrical EngineeringIndian Institute of Technology PatnaPatnaIndia

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