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Optimization of Al Composition in EBL of InGaN/GaN Based Laser Diodes

  • Abhishek SharmaEmail author
  • Kamal Lohani
  • Pramod Kumar
  • Alok Jain
Conference paper
Part of the Springer Proceedings in Physics book series (SPPHY, volume 215)

Abstract

p-type AlGaN Electron Blocking Layer (EBL) has been used successfully for suppression of electron leakage to the p side cladding layers. InGaN/GaN based laser diodes have been investigated numerically for improvements in the output parameters of laser diodes by adjusting the Al composition of the EBL. It is found that Al composition in the EBL is critical for optimum performance of the laser diodes.

Keywords

Electron blocking layer Electron leakage Quantum well Numerical simulation 

Notes

Acknowledgement

Authors would like to thank Director SSPL for allowing to carry out the above work.

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Copyright information

© Springer Nature Switzerland AG 2019

Authors and Affiliations

  • Abhishek Sharma
    • 1
    Email author
  • Kamal Lohani
    • 1
  • Pramod Kumar
    • 1
  • Alok Jain
    • 1
  1. 1.Solid State Physics LaboratoryTimarpurIndia

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